p-Si, and n-Ti02 in Liquid Ammonia

The behavior of several nand p-type semiconductors in liquid ammonia with 0.1 M KI as supporting electrolyte was investigated. The flat-band potentials were estimated from Schottky-Mott plots, and the current-potential curves with several redox couples (e.g., benzophenone, naphthalene, nitrobenzene) in the dark and under illumination were obtained. Photoinjection of solvated electrons at p-GaAs and p-Si was demonstrated, and the results with these materials were shown to be consistent with those from the Fermi level pinning model. Solvated electron photovoltaic cells with these semiconductors were also constructed.